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Veeco Gen200 Edge MBE System Delivers Superior Throughput,Long Campaigns

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Core Tip: Brolis Semiconductors Ltd. and Veeco Instruments Inc. (Nasdaq: VECO) announced today that Brolis has received shipment of a Veeco GEN200® E

Brolis Semiconductors Ltd. and Veeco Instruments Inc. (Nasdaq: VECO) announced today that Brolis has received shipment of a Veeco GEN200® Edge™ Molecular Beam Epitaxy (MBE) production system for installation at their new epitaxial wafer production facility in Vilnius, Lithuania.

Dominykas Vizbaras, CEO of Brolis, commented, “The mission of our company is to become a world-leading provider of complex epitaxial structures for long-wave optoelectronics, such as thermal imaging, concentrator photovoltaic and other custom devices. Veeco is the world’s leading provider of production MBE systems, so we anticipate that the GEN200 will enable us to be extremely competitive in terms of wafer quality, speed to market, and cost effectiveness of our products.”

Jim Northup, Vice President and General Manager of Veeco’s MBE Operations, commented, “We are pleased Brolis has chosen Veeco as their MBE equipment supplier as they open their new state-of-the-art epitaxial manufacturing fab. The GEN200 will support Brolis’ market penetration goals with its production-proven performance and the industry’s lowest cost of ownership.”

About the Veeco GEN200 Edge MBE System

The most cost-effective and highest-capacity multi-4" production MBE system in the market today, the Veeco GEN200 Edge MBE System delivers superior throughput, long campaigns and excellent wafer quality in growing epitaxial wafers for custom devices.

About Brolis Semiconductors Ltd

Brolis Semiconductors Ltd. manufactures type-I GaSb laser diodes for wavelength range 1800nm – 4000nm and offers high-throughput MBE service of arsenides and antimonides on GaSb, InSb, InAs, GaAs and InP substrates. Our key technologies include growth of mixed group-V antimonides and quinternary heterostructures, which is very important for most infrared optoelectronic device applications such as type-II superlattice FPAs, GaSb laser diodes, tunnel junction devices, etc.

 
 
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